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About this Engineering article
Effect of Al content on the microstructure in GaN grown on Si by MOVPE by X. Chen; M. Ishiko; Y. Kuroiwa; N. Sawaki is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- X. Chen; M. Ishiko; Y. Kuroiwa; N. Sawaki
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)
- Published
- 2003
- Language
- EN
- Field
- Engineering (Physical Sciences)
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