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About this Engineering article
Reliability of shallow n+-type layers formed in dual As and B implanted silicon by rapid thermal annealing by Katsuhiro Yokota; Kouichi Hosokawa; Kouji Oda; Fumiyoshi Miyashita; Kiyoto Hirai; Hiromichi Takano; Masao Kumagai; Yasuo Ando; Kouji Matsuda is a Engineering article available to read on EtoBox.
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- Author
- Katsuhiro Yokota; Kouichi Hosokawa; Kouji Oda; Fumiyoshi Miyashita; Kiyoto Hirai; Hiromichi Takano; Masao Kumagai; Yasuo Ando; Kouji Matsuda
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0168-583X)
- Published
- 1997
- Field
- Engineering (Physical Sciences)