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About this Physics and Astronomy article
Electrode Interdependence and Hole Capacitance in Capacitance–voltage Characteristics of Hydrogenated Amorphous Silicon Thin-film Transistor by Park, Hyuk-Ryeol; Kwon, Daewon; Cohen, J. David is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- Park, Hyuk-Ryeol; Kwon, Daewon; Cohen, J. David
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 1998
- Field
- Physics and Astronomy (Physical Sciences)
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