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SPIE Proceedings [SPIE SPIE OPTO: Integrated Optoelectronic Devices - San Jose, CA (Saturday 24 January 2009)] Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIII - GaN-based LEDs grown on 6-inch diameter Si (111) substrates by MOVPE by Zhu, D.; McAleese, C.; McLaughlin, K. K.; Häberlen, M.; Salcianu, C. O.; Thrush, E. J.; Kappers, M. J.; Phillips, W. A.; Lane, P.; Wallis, D. J.; Martin, T.; Astles, M.; Thomas, S.; Pakes, A.; Heuken, M.; Humphreys, C. J.; Streubel, Klaus P.; Jeon, Heonsu; Tu, Li-Wei is a scholarly article available to read on EtoBox.

Author
Zhu, D.; McAleese, C.; McLaughlin, K. K.; Häberlen, M.; Salcianu, C. O.; Thrush, E. J.; Kappers, M. J.; Phillips, W. A.; Lane, P.; Wallis, D. J.; Martin, T.; Astles, M.; Thomas, S.; Pakes, A.; Heuken, M.; Humphreys, C. J.; Streubel, Klaus P.; Jeon, Heonsu; Tu, Li-Wei
Publisher
SPIE
Published
2009
Language
EN

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