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About this Engineering article
Comparative analysis of AlGaN/GaN high electron mobility transistor with sapphire and 4H-SiC substrate by Sengupta, Anumita; Islam, Aminul is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Sengupta, Anumita; Islam, Aminul
- Publisher
- Springer-Verlag; Springer Verlag; Springer Science and Business Media LLC (ISSN 0946-7076)
- Published
- 2018
- Field
- Engineering (Physical Sciences)