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About this Engineering article
Enhancement of Temperature Sensitivity for Metal–Oxide–Semiconductor (MOS) Tunneling Temperature Sensors by Utilizing Hafnium Oxide $(\hbox{HfO} {2})$ Film Added on Silicon Dioxide $(\hbox{SiO} {2})$ by Wang, Tsung-Miau; Chang, Chia-Hua; Hwu, Jenn-Gwo is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Wang, Tsung-Miau; Chang, Chia-Hua; Hwu, Jenn-Gwo
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 1530-437X)
- Published
- 2006
- Field
- Engineering (Physical Sciences)
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