About this scholarly article

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 7 February 2015)] Gallium Nitride Materials and Devices X - Nonradiative recombination mechanisms in InGaN/GaN light-emitting diodes analyzed by various device characterization techniques by Chyi, Jen-Inn; Fujioka, Hiroshi; Morkoç, Hadis; Shin, Dong-Soo; Han, Dong-Pyo; Zheng, Dong-Guang; Oh, Chan-Hyoung; Kim, Hyun-Sung; Kim, Kyu-Sang; Shim, Jong-In is a scholarly article available to read on EtoBox.

Author

Chyi, Jen-Inn; Fujioka, Hiroshi; Morkoç, Hadis; Shin, Dong-Soo; Han, Dong-Pyo; Zheng, Dong-Guang; Oh, Chan-Hyoung; Kim, Hyun-Sung; Kim, Kyu-Sang; Shim, Jong-In

Publisher

SPIE

Published

2015