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Can I read Si(1 1 1) step fluctuations in reflection electron microscopy at 1100 °C: anomalous step–step repulsion on EtoBox?
Si(1 1 1) step fluctuations in reflection electron microscopy at 1100 °C: anomalous step–step repulsion by Robert D. Schroll; Saul D. Cohen; T.L. Einstein; J.-J. Métois; Hailu Gebremariam; Howard L. Richards; Ellen D. Williams is a Materials Science article available to read on EtoBox.
What is Si(1 1 1) step fluctuations in reflection electron microscopy at 1100 °C: anomalous step–step repulsion about?
Using reflection electron microscopy (REM) we study step fluctuations of Si(1 1 1) at 1100 C. Sublimation is compensated by flux from a nearby crystal. The fluctuation behavior is qualitatively like that at 900 C (where evaporation is negligible), with unexplained quantitative differences. Regarding the three parameters of the step continuum model of vicinal surfaces, the step stiffness is about half that at 900 C, in agreement with theory. Step repulsions are at least six times as strong as predicted from 900 C, suggesting non-equilibrium effects probably due to electromigration from the heating current. Temporal correlations have a large initial offset (due to slow scanning relative to fluctuations) but show scaling behavior.
Who reads Si(1 1 1) step fluctuations in reflection electron microscopy at 1100 °C: anomalous step–step repulsion?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Robert D. Schroll; Saul D. Cohen; T.L. Einstein; J.-J. Métois; Hailu Gebremariam; Howard L. Richards; Ellen D. Williams
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)
- Published
- 2003
- Language
- EN
- Field
- Materials Science (Physical Sciences)