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About this Materials Science article
Irradiation effects in helium implanted silicon carbide measured by X-ray absorption spectrometry by Manuel A. Pouchon; Jiachao Chen; Annick Froideval; Markus Janousch; Claude Degueldre is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Manuel A. Pouchon; Jiachao Chen; Annick Froideval; Markus Janousch; Claude Degueldre
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-3115)
- Published
- 2009
- Language
- EN
- Field
- Materials Science (Physical Sciences)