Can I read CG2H40025F GaN HEMT Datasheet on EtoBox?
CG2H40025F GaN HEMT Datasheet by mohamed talha is a document available to read on EtoBox.
What is CG2H40025F GaN HEMT Datasheet about?
The document describes the CG2H40025, a 25 W, 28 V RF power gallium nitride (GaN) high electron mobility transistor (HEMT). It offers broadband solutions for RF and microwave applications due to its high efficiency, gain, and bandwidth. The transistor is available in both a screw-down flange package and solder-down pill package. Key features include operation up to 6 GHz with over 15 dB small signal gain, 30 W typical power, and 70% efficiency. Large signal models are available to support circuit design sim
- Author
- mohamed talha
- Language
- EN