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About this Engineering article
Buried nanoscale damaged layers formed in Si and SiC crystals as a result of high-dose proton implantation by V. A. Kozlov; V. V. Kozlovskii; A. N. Titkov; M. S. Dunaevskii; A. K. Kryzhanovskii is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- V. A. Kozlov; V. V. Kozlovskii; A. N. Titkov; M. S. Dunaevskii; A. K. Kryzhanovskii
- Publisher
- Springer; Pleiades Publishing; Pleiades Publishing Ltd (ISSN 1063-7826)
- Published
- 2002
- Field
- Engineering (Physical Sciences)