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About this Engineering article
Impact of Quantum Capacitance on Intrinsic Inversion Capacitance Characteristics and Inversion-Charge Loss for Multigate III–V-on-Insulator nMOSFETs by Shen, Hsin-Hung; Shen, Shih-Lun; Yu, Chang-Hung; Su, Pin is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Shen, Hsin-Hung; Shen, Shih-Lun; Yu, Chang-Hung; Su, Pin
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2016
- Language
- EN
- Field
- Engineering (Physical Sciences)
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