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This study presents the first low-temperature scanning tunneling microscopy (STM) investigation of the V3Si (111) surface, revealing a √3×√3 superstructure and characteristics of multigap superconductivity. The tunneling spectrum indicates a fully gapped superconducting state with two coherence peaks, suggesting V3Si is a multiband s-wave superconductor, despite the observed gap sizes being smaller than expected for bulk superconductivity. The findings highlight the potential of V3Si for silicon-based super

Author

subash20231171

Language

EN