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Stain etching of silicon with V~2~O~5~ by Kurt W. Kolasinski; Julia Yadlovskiy is a Engineering article available to read on EtoBox.

What is Stain etching of silicon with V~2~O~5~ about?

## Abstract Formation of porous silicon by etching of silicon with vanadium pentoxide dissolved in HF(aq) has been studied with infrared spectroscopy and electron microscopy. The rate of film growth depends strongly on the V~2~O~5~ concentration. Addition of ethanol greatly decreases the etch rate and changes the pore morphology from a mixture of {100} + {110} planes to predominantly {100} planes. A plot of thickness vs. etch time in aqueous solutions evolves from a quadratic to a linear dependence. A model is developed in which the surface area depends linearly on film thickness and the thickness exhibits the measured functional form with respect to time. In this model pores with a uniform diameter nucleate randomly, initially grow rapidly before slowing to grow at a constant rate. The pore density increases linearly with time then saturates causing the transition to the linear growth rate phase. This model simultaneously fits both the short time and long time behaviour of the thickness and surface area. Pore formation does not involve an oxide intermediate. Films emit brilliant visible photoluminescence, and are highly uniform both in structure and photoluminescence. (© 2011 WILE

Who reads Stain etching of silicon with V~2~O~5~?

Author

Kurt W. Kolasinski; Julia Yadlovskiy

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)

Published

2010

Language

EN

Field

Engineering (Physical Sciences)