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Conductance quantization in etched Si/SiGe quantum point contacts by Scappucci, G.; Di Gaspare, L.; Giovine, E.; Notargiacomo, A.; Leoni, R.; Evangelisti, F. is a scholarly article available to read on EtoBox.

What is Conductance quantization in etched Si/SiGe quantum point contacts about?

We fabricated strongly confined Schottky-gated quantum point contacts by etching Si/SiGe heterostructures and observed intriguing conductance quantization in units of approximately 1e2/h. Non-linear conductance measurements were performed depleting the quantum point contacts at fixed mode-energy separation. We report evidences of the formation of a half 1e2/h plateau, supporting the speculation that adiabatic transmission occurs through 1D modes with complete removal of valley and spin degeneracies.

Author

Scappucci, G.; Di Gaspare, L.; Giovine, E.; Notargiacomo, A.; Leoni, R.; Evangelisti, F.

Published

2005

Language

EN