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The study investigates the growth and fabrication of GaN/InGaN violet LEDs on patterned sapphire substrates (PSS) and conventional single side polished substrates (SSP). Results show that LEDs on PSS exhibit significantly higher photoluminescence and electroluminescence intensities, with a light output 2.15 times greater than those on SSP at a forward current of 100 mA. The findings suggest that using PSS improves the quality of the epitaxial layers and enhances light extraction efficiency.

Author

saroj

Language

EN