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About this Engineering article
Carbon-doped GaAs grown by organometallic vapor phase epitaxy using tris-dimethylaminoarsenic and CCl4 by W.S. Hobson; J.-F. Zheng; M. Stavola; S.J. Pearton is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- W.S. Hobson; J.-F. Zheng; M. Stavola; S.J. Pearton
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 1994
- Language
- EN
- Field
- Engineering (Physical Sciences)
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