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What is Effective Carrier Velocity in RF MOSFETs about?

This paper presents a novel method for extracting effective carrier velocity in RF MOSFETs by measuring actual inversion charge across various Vds values, utilizing gate-drain intrinsic capacitance and gmb-gm relations. The proposed method improves accuracy over previous techniques by avoiding linear approximations and is applicable across all operational regimes. Results demonstrate that the effective carrier velocity can exceed bulk saturation velocity as gate lengths decrease, highlighting the importance

Author

P. Hari Krishnan ECE-Research scholar

Language

EN