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When dislocations move in crystals, they will be encountered by various ob stacles. At low temperatures, dislocations can glide only when the applied stress exceeds the internal stress (resistance) generated by these obstacles. At high temperatures, however, some obstacles can be overcome with the help of thermal activation and, therefore, less applied stresses are needed for the initiation of dislocation motion, which leads to a decrease in flow stress. Thus, deformation process at high temperatures is strongly affected by the characteristics, distribution and intensity of the obstacles. The obstacles hinder the motion of dislocations in two different ways'-1 ' 2] . One is the long-range internal stress τ,, which is attributed to the superimposition of the elastic stress field generated by all the dislocations in the crystal. The long-range internal stress will wave at a large wavelength in the crystal as indicated in Fig. 3. 1(a). Dislocations can not overcome the long-rang obsta cles through thermal activatioa As a result, r ( is independent of temperature (strictly speaking, this is not true since the elastic modulus is temperature-de pendent. Nevertheless, the dependence is us

Publisher

Elsevier

Published

2010

Language

EN