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SiGe, GaAs, and InP Heterojunction Bipolar Transistors (Wiley Series in Microwave and Optical Engineering) by Yuan, Jiann S. is a book available to read on EtoBox.

What is SiGe, GaAs, and InP Heterojunction Bipolar Transistors (Wiley Series in Microwave and Optical Engineering) about?

<p>An up-to-date, comprehensive guide to heterojunction bipolar transistor technology.</p><p>Owing to their superior performance in microwave and millimeter-wave applications, heterojunction bipolar transistors (HBTs) have become a major force in mobile and wireless communications. This book offers an integrated treatment of SiGe, GaAs, and InP HBTs, presenting a much-needed overview of HBTs based on different materials systems-their fabrication, analysis, and testing procedures.</p><p>Highly respected expert Jiann S. Yuan discusses in depth the dc and RF performance and modeling of HBT devices, including simulation, thermal instability, reliability, low-temperature and high-temperature performance, and HBT analog and digital circuits. He provides step-by-step presentations of HBT materials-including Si HBTs and III-V and IV-IV compound HBTs, which are rarely described in the literature. Also covered are device and circuit interaction as well as specific high-speed devices in mobile and wireless communications.</p><p>This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, an

Author

Yuan, Jiann S.

Publisher

Wiley-Interscience

Published

1999

Language

EN

ISBN

9780471197461

Subjects

Engineering, Stem

Rating

1.5 / 5 (2 ratings)

Updated

2026-03-14