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a‐SiC:H films deposited by PECVD for MEMS applications by Marcus V. Pelegrini; Gustavo P. Rehder; Inés Pereyra is a Engineering article available to read on EtoBox.
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## Abstract In this work, we report on the deposition of stoichiometric a‐SiC:H with high Young's modulus and hardness for MEMS applications. A series of samples was deposited using different r.f. power densities in a PECVD system in order to explore the limits of the silane starving plasma condition and investigate the change of the deposition rate. Further, the density of the material was measured by a floatation method for the different deposition conditions. The residual stress was measured in the as‐deposited films and reduced by post‐deposition annealing. (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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- Author
- Marcus V. Pelegrini; Gustavo P. Rehder; Inés Pereyra
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); Wiley - V C H Verlag GmbbH & Co.; Wiley (ISSN 1862-6351)
- Published
- 2010
- Language
- EN
- Field
- Engineering (Physical Sciences)