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Electrical properties of Ir-silicide formation on p-Si(100) in ultra-high vacuum by C.K. Chung; J. Hwang; T.H. Jaw; D.S. Wuu is a Engineering article available to read on EtoBox.

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An epitaxial Ir-silicide film was grown on top of a p-Si 100 substrate a temperature of 450ЊC in an ultra-high vacuum. The epitaxial Ir-silicide film was identified to be Ir Si with four types of epitaxial modes. The average Schottky barrier height of the 3 4 ## Ž . epitaxial Ir Si rp-Si 100 diode at 60᎐100 K was determined to be 0.177 eV with an ideality factor of 1.12. In contrast, a 3 4 Ž . polycrystalline IrSirp-Si 100 diode was formed by conventional room-temperature deposition and annealing at high temperatures, and its average Schottky barrier height was 0.157 eV with an ideality factor of 1.08. The difference in Schottky barrier height was attributed to the merged effect of phase composition and microstructure difference between Ir Si and IrSi silicides. 3 4 Ž . Ž . The epitaxial Ir Si rp-Si 100 diode has higher n values than polycrystalline IrSirp-Si 100 due to more interfacial states of 3 4 Ž . oxygen remaining at the Ir Si rp-Si 100 interface.

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Author

C.K. Chung; J. Hwang; T.H. Jaw; D.S. Wuu

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2000

Language

EN

Field

Engineering (Physical Sciences)