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Cathodoluminescence of GaN doped with Sm and Ho by H.J. Lozykowski; W.M. Jadwisienczak; I. Brown is a Physics and Astronomy article available to read on EtoBox.

What is Cathodoluminescence of GaN doped with Sm and Ho about?

We report the first observation of visible cathodoluminescence of the rare earth (RE) elements Sm, Ho implanted in GaN. The implanted samples were given isochronal thermal annealing treatments at a temperature of 1100ЊC in N 2 , at atmospheric pressure to recover implantation damages and activate the RE ions. The sharp characteristic emission lines corresponding to Sm 3ϩ and Ho 3ϩ intra-4f n -shell transitions are resolved in the spectral range from 400 to 1000 nm, and observed over the temperature range of 11-411 K. The cathodoluminescence emission is only weakly temperature dependent. The results indicate that RE doped GaN epilayers are suitable as a material for visible optoelectronic devices.

Who reads Cathodoluminescence of GaN doped with Sm and Ho?

Author

H.J. Lozykowski; W.M. Jadwisienczak; I. Brown

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0038-1098)

Published

1999

Language

EN

Field

Physics and Astronomy (Physical Sciences)