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About this Engineering article
Improved Ti Self-Aligned Silicide Technology Using High Dose Ge Pre-Amorphization for 0.10 µm CMOS and Beyond by Ohuchi, Kazuya; Miyashita, Katsura; Murakoshi, Atsushi; Yoshimura, Hisao; Suguro, Kyoichi; Toyoshima, Yoshiaki is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ohuchi, Kazuya; Miyashita, Katsura; Murakoshi, Atsushi; Yoshimura, Hisao; Suguro, Kyoichi; Toyoshima, Yoshiaki
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; IOP Publishing (ISSN 0021-4922)
- Published
- 1999
- Field
- Engineering (Physical Sciences)