About this scholarly article

Formation of Highly N-doped Gallium Arsenide Layers by Rapid Thermal Oxidation Followed by Rapid Thermal Annealing of Silicon-capped Gallium Arsenide by Sadana, D. K.; de Souza, J. P.; Cardone, F. is a scholarly article available to read on EtoBox.

Author

Sadana, D. K.; de Souza, J. P.; Cardone, F.

Publisher

American Institute of Physics; AIP Publishing (ISSN 0003-6951)

Published

1991