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About this scholarly article
The Effect of the number of InGaN/GaN pairs on the photoelectrochemical properties of InGaN/GaN multi quantum wells by Bae, Hyojung; Park, Jun-Beom; Fujii, Katsushi; Lee, Hyo-Jong; Lee, Sang-Hyun; Ryu, Sang-Wan; Lee, June Key; Ha, Jun-Seok is a scholarly article available to read on EtoBox.
- Author
- Bae, Hyojung; Park, Jun-Beom; Fujii, Katsushi; Lee, Hyo-Jong; Lee, Sang-Hyun; Ryu, Sang-Wan; Lee, June Key; Ha, Jun-Seok
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)
- Published
- 2017
- Language
- EN