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About this Engineering article
III–V/Ge High Mobility Channel Integration of InGaAs n-Channel and Ge p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with Self-Aligned Ni-Based Metal Source/Drain Using Direct Wafer Bonding by Yokoyama, Masafumi; Kim, Sanghyeon; Zhang, Rui; Taoka, Noriyuki; Urabe, Yuji; Maeda, Tatsuro; Takagi, Hideki; Yasuda, Tetsuji; Yamada, Hisashi; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Sugiyama, Masakazu; Nakano, Yoshiaki; Takenaka, Mitsuru; Takagi, Shinichi is a Engineering article available to read on EtoBox.
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- Author
- Yokoyama, Masafumi; Kim, Sanghyeon; Zhang, Rui; Taoka, Noriyuki; Urabe, Yuji; Maeda, Tatsuro; Takagi, Hideki; Yasuda, Tetsuji; Yamada, Hisashi; Ichikawa, Osamu; Fukuhara, Noboru; Hata, Masahiko; Sugiyama, Masakazu; Nakano, Yoshiaki; Takenaka, Mitsuru; Takagi, Shinichi
- Publisher
- Institute of Pure and Applied Physics; Japan Society of Applied Physics; Japan Soc of Applied Physics; IOP Publishing (ISSN 1882-0778)
- Published
- 2012
- Language
- EN
- Field
- Engineering (Physical Sciences)