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Electronic Structures of Ultra-thin Silicon Carbides Deposited on Graphite by Y Baba; T Sekiguchi; I Shimoyama; Krishna G Nath is a Materials Science article available to read on EtoBox.

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Electronic structures of ultra-thin silicon carbide films have been investigated by X-ray photoelectron spectroscopy (XPS) and Si K-edge X-ray absorption near edge structure (XANES) using linearly polarized synchrotron soft X-rays. Silicon carbide films were deposited on the surface of highly oriented pyrolytic graphite (HOPG) by ion beam deposition method. Tetramethylsilane (Si(CH 3 ) 4 ) was used as a discharge gas. The XPS and XANES features for the thick layers were similar to those for the bulk SiC. For sub-monolayered films, the Si 1s binding energy in XPS was higher by 2.5 eV than that for bulk SiC. This suggests the existence of low-dimensional SiC x where the silicon atoms are more positively charged than those in bulk SiC. After annealing the sub-monolayered film at 850 8C, a new peak appeared around 1840 eV in the XANES spectrum. The energy of this new peak was lower than those for any other silicon compounds. The low-energy feature of the XANES peak suggests the existence of p \* -like orbitals around the silicon atom. On the basis of the polarization dependencies of the XANES spectra, it was revealed that the direction of the p \* -like orbitals are nearly perpendicula

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Author

Y Baba; T Sekiguchi; I Shimoyama; Krishna G Nath

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)

Published

2004

Language

EN

Field

Materials Science (Physical Sciences)