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Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy by K. Pfennighaus; A. Fissel; U. Kaiser; M. Wendt; J. Kräuβlich; G. Peiter; B. Schröter; W. Richter is a Materials Science article available to read on EtoBox.
What is Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy about?
Thin crystalline Sic films were grown on Si(ll1) using solid state evaporation at substrate temperatures between 780 and 900°C. The growth rates were in the range between 30 and 120 nm h-'. The films were characterized by in situ reflection high-energy electron diffraction (RHEED) and ex situ transmission electron microscopy (TEM), scanning electron microscopy (SEM), infrared (IR) spectroscopy and X-ray diffraction (XRD). The films grown at high temperatures and low growth rates were found to be epitaxial. They mostly consist of twinned-cubic structure, but with increasing layer thickness hexagonal stacking sequences often were found. In the orientation distribution function full width at half maximum (FWHM) values of down to lo were measured.
Who reads Investigation of growth conditions for epitaxial growth of SiC on Si in the solid-source molecular beam epitaxy?
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- K. Pfennighaus; A. Fissel; U. Kaiser; M. Wendt; J. Kräuβlich; G. Peiter; B. Schröter; W. Richter
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd; Elsevier BV (ISSN 0921-5107)
- Published
- 1997
- Language
- EN
- Field
- Materials Science (Physical Sciences)