About this scholarly article
Picosecond Avalanche Detector -- working principle and gain measurement with a proof-of-concept prototype by Paolozzi, L.; Munker, M.; Cardella, R.; Milanesio, M.; Gurimskaya, Y.; Martinelli, F.; Picardi, A.; Rücker, H.; Trusch, A.; Valerio, P.; Cadoux, F.; Cardarelli, R.; Débieux, S.; Favre, Y.; Fenoglio, C. A.; Ferrere, D.; Gonzalez-Sevilla, S.; Kotitsa, R.; Magliocca, C.; Moretti, T.; Nessi, M.; Medina, A. Pizarro; Iglesias, J. Sabater; Saidi, J.; Pinto, M. Vicente Barreto; Zambito, S.; Iacobucci, G. is a scholarly article available to read on EtoBox.
The Picosecond Avalanche Detector is a multi-junction silicon pixel detector based on a $\mathrm{(NP)_{drift}(NP)_{gain}}$ structure, devised to enable charged-particle tracking with high spatial resolution and picosecond time-stamp capability. It uses a continuous junction deep inside the sensor volume to amplify the primary charge produced by ionizing radiation in a thin absorption layer. The signal is then induced by the secondary charges moving inside a thicker drift region. A proof-of-concept monolithic prototype, consisting of a matrix of hexagonal pixels with 100 $\mu$m pitch, has been produced using the 130 nm SiGe BiCMOS process by IHP microelectronics. Measurements on probe station and with a $^{55}$Fe X-ray source show that the prototype is functional and displays avalanche gain up to a maximum electron gain of 23. A study of the avalanche characteristics, corroborated by TCAD simulations, indicates that space-charge effects due to the large primary charge produced by the conversion of X-rays from the $^{55}$Fe source limits the effective gain.
- Author
- Paolozzi, L.; Munker, M.; Cardella, R.; Milanesio, M.; Gurimskaya, Y.; Martinelli, F.; Picardi, A.; Rücker, H.; Trusch, A.; Valerio, P.; Cadoux, F.; Cardarelli, R.; Débieux, S.; Favre, Y.; Fenoglio, C. A.; Ferrere, D.; Gonzalez-Sevilla, S.; Kotitsa, R.; Magliocca, C.; Moretti, T.; Nessi, M.; Medina, A. Pizarro; Iglesias, J. Sabater; Saidi, J.; Pinto, M. Vicente Barreto; Zambito, S.; Iacobucci, G.
- Published
- 2022
- Language
- EN