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About this Physics and Astronomy article
Effect of different gate lengths on device linearity in AlGaN/GaN high electron mobility transistors by Cui, Peng ;Lv, Yuanjie ;Liu, Huan ;Cheng, Aijie ;Luan, Chongbiao ;Zhou, Yang ;Lin, Zhaojun is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Cui, Peng ;Lv, Yuanjie ;Liu, Huan ;Cheng, Aijie ;Luan, Chongbiao ;Zhou, Yang ;Lin, Zhaojun
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 1386-9477)
- Published
- 2020
- Field
- Physics and Astronomy (Physical Sciences)