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About this Engineering article
Physically-based simulation of zinc oxide thin-film transistors: Contact resistance contribution on density of states by Dominguez, Miguel A.; Alcantara, Salvador; Soto, Susana is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Dominguez, Miguel A.; Alcantara, Salvador; Soto, Susana
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
- Published
- 2016
- Language
- EN
- Field
- Engineering (Physical Sciences)
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