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Chemical characterisation of evaporated In~2~S~ x ~ buffer layers in Cu(In,Ga)Se~2~ thin‐film solar cells with SNMS and SIMS by Axel Eicke; Stefanie Spiering; Ariane Dresel; Michael Powalla is a Engineering article available to read on EtoBox.

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## Abstract For the series production of Cu(In,Ga)Se~2~ (CIGS)‐based thin‐film solar cells it is desirable to replace the thin CdS buffer layer between absorber and transparent front contact by non‐toxic, low‐absorbing semiconductors. In~2~S~3~, deposited by atomic layer deposition, has already been qualified as an alternative buffer material. In this work, results of indium sulphide buffer layers deposited by thermal evaporation are presented. Pressed powders with different compositions and morphology were used for evaporation at about 720 °C, resulting in different layer compositions and cell performances. The composition of the initial powder material and of the pellets after the deposition steps was determined by XRF. The deposited In~2~S~x~O~y~ buffer layers and the buffer/absorber interface region were analysed by SIMS and sputtered neutral mass spectrometry (SNMS) depth profiling. Fine‐grained pressed In~2~S~3~ powder evaporates rather homogeneously during the entire deposition run, resulting in nearly stoichiometric In~2~S~3~ layers. S and Cl are evaporated preferentially from pellets of coarse‐grained, S‐poor In~2~S~2.4~ powder containing 2 at% Cl, leading to excess S and

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Author

Axel Eicke; Stefanie Spiering; Ariane Dresel; Michael Powalla

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Inc.; Wiley; Research Square (ISSN 0142-2421)

Published

2008

Language

EN

Field

Engineering (Physical Sciences)