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Iron-Gallium and Iron-Indium Recombination in Silicon by nandiniphy2024 is a document available to read on EtoBox.

This study investigates the recombination activity of iron-gallium (FeGa) and iron-indium (FeIn) pairs in silicon using carrier lifetime measurements. The results show that FeGa and FeIn are significantly more effective recombination centers compared to FeB pairs, with specific energy levels and capture cross sections determined for both. Additionally, strong illumination can dissociate these pairs, and their concentrations can be quantified through lifetime changes before and after illumination.

Author

nandiniphy2024

Language

EN