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Can I read Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Topics in Applied Physics (131)) on EtoBox?

Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Topics in Applied Physics (131)) by Byung-Eun Park (editor), Hiroshi Ishiwara (editor), Masanori Okuyama (editor), Shigeki Sakai (editor), Sung-Min Yoon (editor) is a nonfiction available to read on EtoBox.

What is Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Topics in Applied Physics (131)) about?

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells in ferroelectric nonvolatile memories. One is the capacitor-type FeRAM and the other is the field-effect transistor (FET)-type FeRAM. Although the FET-type FeRAM claims the ultimate scalability and nondestructive readout characteristics, the capacitor-type FeRAMs have been the main interest for the major semiconductor memory companies, because the ferroelectric FET has fatal handicaps of cross-talk for random accessibility and short retention time. This book aims to provide the readers with development history, technical issues, fabrication methodologies, and pr

Who reads Ferroelectric-Gate Field Effect Transistor Memories: Device Physics and Applications (Topics in Applied Physics (131))?

It is typically read by self-directed learners exploring a subject in depth.

Common subject areas: history, science, philosophy, social sciences.

Author
Byung-Eun Park (editor), Hiroshi Ishiwara (editor), Masanori Okuyama (editor), Shigeki Sakai (editor), Sung-Min Yoon (editor)
Publisher
Springer Singapore : Imprint : Springer
Published
2020
Language
EN
ISBN
9789811512131
Category
nonfiction
Subjects
Science, Engineering, Physics

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