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In Situ Cleaning Method for Silicon Surface Using Hydrogen Fluoride Gas and Hydrogen Chloride Gas in a Hydrogen Ambient by Hitoshi Habuka; Toru Otsuka; Masatake Katayama is a Engineering article available to read on EtoBox.

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To obtain a desirable silicon substrate surface for epitaxial growth, the in situ cleaning method is studied for the first time in a hydrogen ambient at atmospheric pressure in a quartz chamber using a combination of hydrogen fluoride gas and hydrogen chloride gas. A native oxide film can be removed by anhydrous hydrogen fluoride gas at room temperature within a few minutes. Hydrogen chloride gas is used to remove an organic hydrocarbon film at 973 K in 1 min. Perfect removal of both films from the entire silicon surface is indicated by very small haze intensity of the silicon epitaxial film grown on the substrate and is also indicated by the haze intensity after baking at 1223 K in a hydrogen ambient at atmospheric pressure. It is concluded that the in situ cleaning method has high capability for epitaxy on silicon surface.

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Author

Hitoshi Habuka; Toru Otsuka; Masatake Katayama

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

1998

Language

EN

Field

Engineering (Physical Sciences)