About this scholarly article

2013 IEEE International Electron Devices Meeting - High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability by Kim, Sang Hyeon; Yokoyama, M.; Nakane, R.; Ichikawa, O.; Osada, T.; Hata, M.; Takenaka, M.; Takagi, S. is a scholarly article available to read on EtoBox.

Author

Kim, Sang Hyeon; Yokoyama, M.; Nakane, R.; Ichikawa, O.; Osada, T.; Hata, M.; Takenaka, M.; Takagi, S.

Publisher

IEEE

Published

2013

Language

EN