About this scholarly article

IEEE International Symposium on Industrial Electronics - Xian, China (25-29 May 1992)] [1992] Proceedings of the IEEE International Symposium on Industrial Electronics - Characteristics of a new gate drive circuit for high-side N-MOSFET applied to high voltage circuits by Ishida, M.; Kubo, T.; Hori, T. is a scholarly article available to read on EtoBox.

Author

Ishida, M.; Kubo, T.; Hori, T.

Publisher

IEEE

Published

1992

Language

EN