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This document discusses the development of a laser-produced plasma (LPP) extreme-ultraviolet (EUV) light source for advanced lithography applications, highlighting its potential to replace 193 nm immersion technology for sub-22 nm patterning. It details the performance of the LPP sources, including subsystem testing, collector qualification, out-of-band radiation measurements, and intermediate-focus protection, demonstrating their capability for high-volume manufacturing. The paper concludes that LPP techno

Author

Shashi Thakur

Language

EN