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About this Physics and Astronomy article
Mobility Edge in Nondegenerate Semiconductor with Random Potential of Charged Impurities by M.S. Kagan; E.G. Landsberg; N.G. Zhdanova; I.V. Altukhov is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- M.S. Kagan; E.G. Landsberg; N.G. Zhdanova; I.V. Altukhov
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)
- Published
- 1998
- Language
- EN
- Field
- Physics and Astronomy (Physical Sciences)
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