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IRG4BC20KD IGBT Datasheet by Juan Carlos Terrones Nuñez is a document available to read on EtoBox.

This document provides specifications for an insulated gate bipolar transistor (IGBT) with an ultrafast soft recovery diode. The IGBT has a maximum collector-to-emitter voltage of 600V, continuous collector current ratings of 16A at 25°C and 9A at 100°C, and can withstand short circuits for 10 microseconds. It also has maximum gate-emitter and power dissipation ratings. The IGBT is optimized for operating frequencies above 5kHz and short circuit withstand capability. It is packaged with an ultrafast ant

Author

Juan Carlos Terrones Nuñez

Language

EN