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About this Engineering article
AlGaN/GaN Metal–Oxide–Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped $\hbox{TiO}_{2}$ as a Gate Dielectric by Chih-Chun Hu; Mon-Sen Lin; Tsu-Yi Wu; Adriyanto, F.; Po-Wen Sze; Chang-Luen Wu; Yeong-Her Wang is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Chih-Chun Hu; Mon-Sen Lin; Tsu-Yi Wu; Adriyanto, F.; Po-Wen Sze; Chang-Luen Wu; Yeong-Her Wang
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9383)
- Published
- 2012
- Field
- Engineering (Physical Sciences)