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Low-Power Efficient p+ Si0.7Ge0.3 Pocket Junctionless SGTFET with Varying Operating Conditions by Tripathi, Suman Lata; Sinha, Sanjeet Kumar; Patel, Govind Singh is a Engineering article available to read on EtoBox.

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A new low-power Si 1Àx Ge x pocket junctionless single-gate tunnel field-effect transistor (JLSGTFET) is designed to achieve steep subthreshold performance and a better I ON /I OFF ratio ($ 10 8 ) in sub-20-nanometer technology node. The mole fraction of Ge represented by x is kept at 0.3 for the SiGe pocket region. The proposed JLSGTFET shows better performance with a Ge mole fraction value x = 0.3. The mole fraction value affects various electrical parameters in terms of leakage current, junction capacitance and transconductance of the channel region. The device exhibits reduced switching capacitance due to the smaller-bandgap pocket region between the source and channel. Analysis of the JLSGTFET is carried out for DC and AC parameters at room temperature. Temperature analysis plays a vital role in determining reliable ON-and OFFstate performance in transistors. Therefore, the proposed pocket JLSGTFET is investigated under harsh temperature conditions to characterize the performance for DC and subthreshold parameters. The sensitivity of the device is analyzed under different temperature conditions over a range of 250-400 K to observe subthreshold performance including transfer ch

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Author

Tripathi, Suman Lata; Sinha, Sanjeet Kumar; Patel, Govind Singh

Publisher

Springer US; Springer-Verlag; Springer New York LLC; Springer Science and Business Media LLC (ISSN 0361-5235)

Published

2020

Language

EN

Field

Engineering (Physical Sciences)