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Electronic topological transition in LaSn$_3$ under pressure by Ram, Swetarekha; Kanchana, V.; Vaitheeswaran, G.; Svane, A.; Dugdale, S. B.; Christensen, N. E. is a scholarly article available to read on EtoBox.

What is Electronic topological transition in LaSn$_3$ under pressure about?

The electronic structure, Fermi surface and elastic properties of the iso-structural and iso-electronic LaSn$_3$ and YSn$_3$ intermetallic compounds are studied under pressure within the framework of density functional theory including spin-orbit coupling. The LaSn$_3$ Fermi surface consists of two sheets, of which the second is very complex. Under pressure a third sheet appears around compression $V/V_0=0.94$, while a small topology change in the second sheet is seen at compression $V/V_0=0.90$. This may be in accordance with the anomalous behaviour in the superconducting transition temperature observed in LaSn$_3$, which has been suggested to reflect a Fermi surface topological transition, along with a non-monotonic pressure dependence of the density of states at the Fermi level. The same behavior is not observed in YSn$_3$, the Fermi surface of which already includes three sheets at ambient conditions, and the topology remains unchanged under pressure. The reason for the difference in behaviour between LaSn$_3$ and YSn$_3$ is the role of spin-orbit coupling and the hybridization of La - $4f$ states with the Sn - $p$ states in the vicinity of the Fermi level, which is well explai

Author

Ram, Swetarekha; Kanchana, V.; Vaitheeswaran, G.; Svane, A.; Dugdale, S. B.; Christensen, N. E.

Published

2013

Language

EN