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About this Engineering article
Distribution of Intermediate Oxidation States at the Silicon/silicon Dioxide Interface Obtained by Low-energy Ion Implantation by Benkherourou, O. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Benkherourou, O.
- Publisher
- AVS (American Vacuum Society); American Vacuum Society; American Institute of Physics (ISSN 0734-2101)
- Published
- 1988
- Language
- EN
- Field
- Engineering (Physical Sciences)