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Surface Blistering of Low Temperature Annealed Hydrogen and Helium Co-implanted Germanium and Its Application to Splitting of Bonded Wafer Substrates by R.E. Hurley; H. Wadsworth; J.H. Montgomery; H.S. Gamble is a Engineering article available to read on EtoBox.

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Applications involving transfer of germanium layers to silicon-based substrates often require a process involving a restricted thermal budget. The use of relatively low temperatures has a major advantage in reducing stresses when thermal splitting of implanted germanium wafers bonded to silicon-based substrates is used to create germanium-on-oxide (GeOI) layers. The present study investigates the phenomenon of blistering of hydrogen and helium co-implanted germanium over the temperature range 250-400 C, optical microscopy being used to detect the initial appearance of the blisters. Results showed that plots of Ln(time) vs. blister initiation temperature consisted of several straight-line regions yielding an activation energy for each region. The plots showed similarities to those observed in previous work with silicon co-implanted and annealed under similar conditions. At temperatures below the blister initiation temperature, transmission electron microscopy (TEM), revealed the presence of spherical bubbles at a depth below the surface estimated to be approximately that of the hydrogen implant projected range. GeOI layers were produced by thermal splitting of co-implanted germanium

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Author

R.E. Hurley; H. Wadsworth; J.H. Montgomery; H.S. Gamble

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)

Published

2009

Language

EN

Field

Engineering (Physical Sciences)