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About this Engineering article
Modification of 4H-SiC and 6H-SiC(0001)Si surfaces through the interaction with atomic hydrogen and nitrogen by Maria Losurdo; Maria M. Giangregorio; Pio Capezzuto; Giovanni Bruno; April S. Brown; Tong-Ho Kim; Changhyun Yi is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Maria Losurdo; Maria M. Giangregorio; Pio Capezzuto; Giovanni Bruno; April S. Brown; Tong-Ho Kim; Changhyun Yi
- Publisher
- Springer US; Springer-Verlag; Springer New York LLC; Springer Science and Business Media LLC (ISSN 0361-5235)
- Published
- 2005
- Field
- Engineering (Physical Sciences)