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Ijaret: ©iaeme by IAEME Publication is a document available to read on EtoBox.
Pure ZnS and ZnS:Pb thin films were prepared by vacuum thermal evaporation onto glass substrates at room temperature and 200 nm film thickness to study effect of doping on electrical measurements. Hall measurements indicated that the type of conductivity for pure films is n-type but transforms to p-type after doping. The behavior of I-V characteristics can be considered as ideal diode. The ideality factor for the I-V characteristics at forward bias voltage was calculated. The concentration of carriers
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- IAEME Publication
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- EN