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Phonon-Dominated Mobilities for Carriers in a Diamond Field Effect Transistor With a cBN Overlayer by Ramji Singh; Michael A. Stroscio; Mitra Dutta is a Engineering article available to read on EtoBox.

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In this letter we investigate phonon-dominated mobilities for carriers in a diamond field effect transistor with a cubic Boron Nitride (cBN) overlayer. We investigate the intra-subband scattering due to interaction of electrons with acoustic phonons, treated properly as quantized surface acoustic Rayleigh waves, and include, for the first time, the interaction with remote polar phonons originating in the cBN overlayer. We conclude that the surface acoustic phonon scattering is the dominant mechanism limiting the mobility of electrons for temperatures below 375 K.

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Author

Ramji Singh; Michael A. Stroscio; Mitra Dutta

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Published

2022

Language

EN

Field

Engineering (Physical Sciences)