About this document
A 7T SRAM Data Write With Capacitive Coupling Technique by NK NK is a document available to read on EtoBox.
The document presents a novel 7T-SRAM design that utilizes capacitive coupling for data writing, effectively eliminating current-conflict issues found in traditional 6T and 8T SRAMs. This design achieves a smaller cell size, improved noise margins, and a low soft error rate, making it suitable for nonvolatile RAM applications. The proposed SRAM demonstrates competitive performance in terms of area and efficiency, particularly for high-bandwidth NVRAM page buffer applications.
- Author
- NK NK
- Language
- EN